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IPD60R800CEATMA1 Picture

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IPD60R800CEATMA1

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In Stock:17,094(Ref. price)
Qty.Unit PriceExt. Price
1
$0.22800
$0.22800
Documents
Specifications
DescriptionDetails
Series
CoolMOS™ CE
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
17.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
373 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, IPD60R800CEATMA1 is available in stock and can be delivered on the same day
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