FDG6301N-F085P original stock_Cheapest FDG6301N-F085P_ON Semiconductor agent channel source

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	220mA (Ta)
Rds On (Max) @ Id, Vgs	4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 10V
Power - Max	300mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6

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