SI6544BDQ-T1-GE3 original stock_Cheapest SI6544BDQ-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.7A, 3.8A
Rds On (Max) @ Id, Vgs	43mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	830mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP

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Price advantage, SI6544BDQ-T1-GE3 is available in stock and can be delivered on the same day

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