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MOSFETs - Arrays
EPC2101 Picture

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EPC2101

  • EPC
  • New
  • GAN TRANS ASYMMETRICAL HALF BRID
  • Datasheet download
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In Stock:861(Ref. price)
Qty.Unit PriceExt. Price
1
$6.67850
$6.67850
Documents
Specifications
DescriptionDetails
Series
eGaN®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
9.5A, 38A
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V, 1200pF @ 30V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Other
Price advantage, EPC2101 is available in stock and can be delivered on the same day
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