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FF11MR12W1M1B11BOMA1 Picture

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FF11MR12W1M1B11BOMA1

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In Stock:17,014(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
CoolSiC™+
Package
Bulk
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
100A
Rds On (Max) @ Id, Vgs
11mOhm @ 100A, 15V
Vgs(th) (Max) @ Id
5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
7950pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Other
Price advantage, FF11MR12W1M1B11BOMA1 is available in stock and can be delivered on the same day
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