SIZ900DT-T1-GE3 original stock_Cheapest SIZ900DT-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	24A, 28A
Rds On (Max) @ Id, Vgs	7.2mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1830pF @ 15V
Power - Max	48W, 100W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-PowerPair™
Supplier Device Package	6-PowerPair™

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