DF23MR12W1M1B11BOMA1 original stock_Cheapest DF23MR12W1M1B11BOMA1_Infineon Technologies agent channel source

MOSFETs - Arrays

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In Stock：20,882(Ref. price)

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1	$83.45700	$83.45700

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Specifications

Description	Details
Series	*
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	25A
Rds On (Max) @ Id, Vgs	45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id	5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 800V
Power - Max	20mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, DF23MR12W1M1B11BOMA1 is available in stock and can be delivered on the same day

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