SIZ350DT-T1-GE3 original stock_Cheapest SIZ350DT-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Arrays

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In Stock：9,582(Ref. price)

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Specifications

Description	Details
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	18.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs	6.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 15V
Power - Max	3.7W (Ta), 16.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-Power33 (3x3)

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