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MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	6 N-Channel (3-Phase Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	147A (Tc)
Rds On (Max) @ Id, Vgs	17mOhm @ 100A, 20V
Vgs(th) (Max) @ Id	2.4V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	322nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	5600pF @ 1000V
Power - Max	625W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP6
Supplier Device Package	SP6-P

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