SI4914BDY-T1-GE3 original stock_Cheapest SI4914BDY-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Arrays

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Specifications

Description	Details
Series	LITTLE FOOT®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.4A, 8A
Rds On (Max) @ Id, Vgs	21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2.7W, 3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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Price advantage, SI4914BDY-T1-GE3 is available in stock and can be delivered on the same day

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