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Transistors - Bipolar - Pre-Biased
NTE2367 Picture

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NTE2367

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In Stock:3,104(Ref. price)
Qty.Unit PriceExt. Price
1
$0.65280
$0.65280
Documents
Specifications
DescriptionDetails
Series
-
Package
Bag
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Supplier Device Package
TO-92S
Other
Price advantage, NTE2367 is available in stock and can be delivered on the same day
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