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Transistors - Bipolar - Single
MJD3055TF Picture

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MJD3055TF

  • ON Semiconductor
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  • NPN EPITAXIAL SILICON TRANSISTOR
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In Stock:46,906(Ref. price)
Qty.Unit PriceExt. Price
1
$0.27440
$0.27440
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Current - Collector Cutoff (Max)
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
1.75 W
Frequency - Transition
2MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Other
Price advantage, MJD3055TF is available in stock and can be delivered on the same day
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